Samsung M393B4G70EMB-CK0 32GB vs Crucial Technology CT8G4SFRA266.M8FJ 8GB

总分

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

总分

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

差异规格评论

差异

Samsung M393B4G70EMB-CK0 32GB

需要考虑的原因
Samsung M393B4G70EMB-CK0 32GB

报告一个错误

Crucial Technology CT8G4SFRA266.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 66

左右 -57% 更低的延时
更快的读取速度，GB/s

14.5 7.3

测试中的平均数值
更快的写入速度，GB/s

13.5 6.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B4G70EMB-CK0 32GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

66 42
读取速度，GB/s

7.3 14.5
写入速度，GB/s

6.6 13.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1760 2750

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston 9905678-121.A00G 8GB

Kingston 9905678-121.A00G 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston KHX2400C14/16G 16GB

Kingston KHX2400C14/16G 16GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G