RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B5170FH0-CH9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB

Samsung M393B5170FH0-CH9 4GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
A-DATA Technology AM2P26KC8T1-BXRS 8GB 需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 49
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 29
  • 读取速度，GB/s
    10.0 left arrow 14.9
  • 写入速度，GB/s
    8.2 left arrow 10.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 2811

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965639-002.A01G 8GB
Kingston 9965639-002.A01G 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X4GF2400C16S2 4GB
Corsair CM4X4GF2400C16S2 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
Golden Empire CL5-5-5DDR2 1GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston KHX3600C18D4/32GX 32GB
Kingston KHX3600C18D4/32GX 32GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905713-028.A00G 8GB
Kingston 9905713-028.A00G 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CM4X8GE2400C14K4 8GB
Corsair CM4X8GE2400C14K4 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9905664-010.A00G 4GB
Kingston 9905664-010.A00G 4GB
内存RAM