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Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M2Z3600C14 16GB

Samsung M393B5170FH0-CH9 4GB vs Corsair CMW32GX4M2Z3600C14 16GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
Corsair CMW32GX4M2Z3600C14 16GB

Corsair CMW32GX4M2Z3600C14 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
Corsair CMW32GX4M2Z3600C14 16GB 需要考虑的原因
Corsair CMW32GX4M2Z3600C14 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 49
    左右 -123% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M2Z3600C14 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 22
  • 读取速度，GB/s
    10.0 left arrow 18.3
  • 写入速度，GB/s
    8.2 left arrow 16.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 3934

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

Corsair CMW32GX4M2Z3600C14 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M2Z3600C14 16GB
Corsair CMW32GX4M2Z3600C14 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Neo Forza NMUD480E82-2666 8GB
Neo Forza NMUD480E82-2666 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
内存RAM