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Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLS16G4D30CEST.16FD 16GB

Samsung M393B5170FH0-CH9 4GB vs Crucial Technology BLS16G4D30CEST.16FD 16GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
Crucial Technology BLS16G4D30CEST.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4D30CEST.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 49
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 29
  • 读取速度，GB/s
    10.0 left arrow 17.4
  • 写入速度，GB/s
    8.2 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 3413

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

Crucial Technology BLS16G4D30CEST.16FD 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9965516-112.A00LF 16GB
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G Skill Intl F4-3600C17-4GTZ 4GB
内存RAM
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
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