Samsung M393B5170FH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Samsung M393B5170FH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

18.2 10

测试中的平均数值
更快的写入速度，GB/s

15.1 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.0 18.2
写入速度，GB/s

8.2 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2116 3498

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905700-097.A00G 8GB

Kingston 9905700-097.A00G 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston 9965604-001.D00G 16GB

Kingston 9965604-001.D00G 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB