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Samsung M393B5170FH0-CH9 4GB
Kingston KHX3200C18D4/4G 4GB

Samsung M393B5170FH0-CH9 4GB vs Kingston KHX3200C18D4/4G 4GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 56
    左右 13% 更低的延时
Kingston KHX3200C18D4/4G 4GB 需要考虑的原因
Kingston KHX3200C18D4/4G 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
Kingston KHX3200C18D4/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 56
  • 读取速度，GB/s
    10.0 left arrow 17.9
  • 写入速度，GB/s
    8.2 left arrow 9.4
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 2071

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

Kingston KHX3200C18D4/4G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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