Samsung M393B5170FH0-CH9 4GB vs Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更快的读取速度，GB/s

21.6 10

测试中的平均数值
更快的写入速度，GB/s

18.2 8.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 28
读取速度，GB/s

10.0 21.6
写入速度，GB/s

8.2 18.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2116 3890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMX4GX3M2A1600C9 2GB

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GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS16G4D240FSE.16FBD 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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A-DATA Technology DDR4 2400 16GB

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Mushkin 99[2/7/4]199[F/T] 8GB

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AMD AE34G1601U1 4GB

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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A2K43EB1-CWE 16GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Kingston 9965662-013.A01G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB