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Samsung M393B5170GB0-CK0 4GB
Samsung M393B1K70DH0-CK0 8GB

Samsung M393B5170GB0-CK0 4GB vs Samsung M393B1K70DH0-CK0 8GB

总分
star star star star star
Samsung M393B5170GB0-CK0 4GB

Samsung M393B5170GB0-CK0 4GB

总分
star star star star star
Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

差异 规格 评论

差异

Samsung M393B5170GB0-CK0 4GB 需要考虑的原因
Samsung M393B5170GB0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 49
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    10.8 left arrow 10.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.2
    测试中的平均数值
Samsung M393B1K70DH0-CK0 8GB 需要考虑的原因
Samsung M393B1K70DH0-CK0 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M393B5170GB0-CK0 4GB
Samsung M393B1K70DH0-CK0 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 49
  • 读取速度，GB/s
    10.8 left arrow 10.3
  • 写入速度，GB/s
    8.7 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2237 left arrow 2230

Samsung M393B5170GB0-CK0 4GB RAM的比较

Corsair CMK64GX4M8X4133C19 8GB

Samsung M393B1K70DH0-CK0 8GB RAM的比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M471B1G73DB0-YK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170GB0-CK0 4GB
Samsung M393B5170GB0-CK0 4GB
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM