Samsung M393B5270CH0-CH9 4GB vs Crucial Technology CT8G4SFS824A.M8FE 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology CT8G4SFS824A.M8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 42

左右 -8% 更低的延时
更快的读取速度，GB/s

13.4 10.6

测试中的平均数值
更快的写入速度，GB/s

10.1 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 39
读取速度，GB/s

10.6 13.4
写入速度，GB/s

9.0 10.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

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G Skill Intl F4-4133C17-8GTZR 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB