Samsung M393B5270CH0-CH9 4GB vs G Skill Intl F4-2666C15-8GRKB 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

G Skill Intl F4-2666C15-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 -56% 更低的延时
更快的读取速度，GB/s

13.3 10.6

测试中的平均数值
更快的写入速度，GB/s

10.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2666C15-8GRKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 27
读取速度，GB/s

10.6 13.3
写入速度，GB/s

9.0 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 2823

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9965600-023.A00G 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Panram International Corporation D4N2666PS-16G 16GB

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Crucial Technology BL16G32C16S4B.M16FE 16GB

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Kingston 9965516-430.A00G 16GB

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InnoDisk Corporation M4S0-8GSSOCIK 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

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Kingston 9905403-444.A00LF 4GB

AMD R748G2400U2S-UO 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK16GX4M2D2400C14 8GB

Corsair CMK16GX4M2D2400C14 8GB