Samsung M393B5270CH0-CH9 4GB vs G Skill Intl F4-4400C17-16GTZR 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

G Skill Intl F4-4400C17-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

20.2 10.6

测试中的平均数值
更快的写入速度，GB/s

17.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-4400C17-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

10.6 20.2
写入速度，GB/s

9.0 17.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 4014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. Team-Elite-1333 4GB

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Crucial Technology BLS4G4D240FSB.8FBD 4GB

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Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-3200C16-8GRS 8GB

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A-DATA Technology DDR2 800G 2GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT16G4SFD824A.C16FBR 16GB

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Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kllisre DDR4-8GB 8GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMK8GX4M2A2666C16 4GB

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Samsung M471A4G43BB1-CWE 32GB