Samsung M393B5270CH0-CH9 4GB vs Kingston LV32D4S2S8HD-8 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Kingston LV32D4S2S8HD-8 8GB

需要考虑的原因
Kingston LV32D4S2S8HD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

16.2 10.6

测试中的平均数值
更快的写入速度，GB/s

12.0 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Kingston LV32D4S2S8HD-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

10.6 16.2
写入速度，GB/s

9.0 12.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2423 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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SpecTek Incorporated 16G2666CL19 16GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB