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Samsung M393B5270CH0-CH9 4GB
Kingston XN205T-MIE2 16GB

Samsung M393B5270CH0-CH9 4GB vs Kingston XN205T-MIE2 16GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Kingston XN205T-MIE2 16GB 需要考虑的原因
Kingston XN205T-MIE2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 42
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Kingston XN205T-MIE2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 29
  • 读取速度，GB/s
    10.6 left arrow 17.2
  • 写入速度，GB/s
    9.0 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3698

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Kingston XN205T-MIE2 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905744-066.A00G 32GB
Kingston 9905744-066.A00G 32GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Panram International Corporation R748G2133U2S 8GB
Panram International Corporation R748G2133U2S 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9932301-P01.A00G 4GB
Kingston 9932301-P01.A00G 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M2L3200C16 16GB
Corsair CMK32GX4M2L3200C16 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9965600-023.A00G 16GB
Kingston 9965600-023.A00G 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMH16GX4M2E3200C16 8GB
Corsair CMH16GX4M2E3200C16 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CM4X4GF3000C15K4 4GB
内存RAM