Samsung M393B5270CH0-CH9 4GB vs Samsung M393A2G40EB2-CTD 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 44

左右 5% 更低的延时
更快的读取速度，GB/s

10.6 8.5

测试中的平均数值
更快的写入速度，GB/s

9.0 5.6

测试中的平均数值

Samsung M393A2G40EB2-CTD 16GB

需要考虑的原因
Samsung M393A2G40EB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Samsung M393A2G40EB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 44
读取速度，GB/s

10.6 8.5
写入速度，GB/s

9.0 5.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 1660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 9JSF25672AZ-1G6M1 2GB

Micron Technology 9JSF25672AZ-1G6M1 2GB