Samsung M393B5270CH0-CH9 4GB vs Vasekey M378A1K43BB2-CPB 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

更快的写入速度，GB/s

9.0 6.1

测试中的平均数值

Vasekey M378A1K43BB2-CPB 8GB

需要考虑的原因
Vasekey M378A1K43BB2-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

13.5 10.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Vasekey M378A1K43BB2-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

10.6 13.5
写入速度，GB/s

9.0 6.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 2121

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GZAG43F-18---------- 8GB

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Samsung M471B5273DH0-CK0 4GB

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Samsung M471A2K43BB1-CPB 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Corsair CMD16GX3M2A1866C9 8GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB

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Kingston 9965525-140.A00LF 8GB

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Apacer Technology 78.C1GQB.4032B 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMD32GX4M2C3466C16W 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

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G Skill Intl F4-4400C19-8GTZKK 8GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Avant Technology J642GU42J9266N4 16GB

Avant Technology J642GU42J9266N4 16GB