Samsung M393B5270CH0-CH9 4GB vs Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的读取速度，GB/s

18.8 10.6

测试中的平均数值
更快的写入速度，GB/s

15.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 28
读取速度，GB/s

10.6 18.8
写入速度，GB/s

9.0 15.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3465

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C15-8GTRG 8GB

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Samsung M4 70T5267AZ3-CF7 4GB

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Kingston 9905701-131.A00G 16GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Samsung M471A4G43MB1-CTD 32GB

Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Essencore Limited KD48GU880-36A180U 8GB

Essencore Limited KD48GU880-36A180U 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Crucial Technology BLS16G4D30AESB.M16FE 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB