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Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB

Samsung M395T5160QZ4-CE66 2GB vs Kingston 9965600-012.A01G 16GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 11
    测试中的平均数值
Kingston 9965600-012.A01G 16GB 需要考虑的原因
Kingston 9965600-012.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 75
    左右 -114% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 2,072.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 35
  • 读取速度，GB/s
    2,730.3 left arrow 11.0
  • 写入速度，GB/s
    2,072.7 left arrow 8.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2246

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Kingston 9965600-012.A01G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
SK Hynix HMT125S6TFR8C-G7 2GB
SK Hynix HMT125S6TFR8C-G7 2GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston 9905702-017.A00G 8GB
Kingston 9905702-017.A00G 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
内存RAM