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Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB

Samsung M395T5160QZ4-CE66 2GB vs Kingston 9965600-012.A01G 16GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 11
    测试中的平均数值
Kingston 9965600-012.A01G 16GB 需要考虑的原因
Kingston 9965600-012.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 75
    左右 -114% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 2,072.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 35
  • 读取速度，GB/s
    2,730.3 left arrow 11.0
  • 写入速度，GB/s
    2,072.7 left arrow 8.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2246

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Kingston 9965600-012.A01G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M395T5160QZ4-CE66 2GB
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Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M393A2K43BB1-CRC 16GB
内存RAM
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Corsair CMD32GX4M4A2800C16 8GB
内存RAM
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内存RAM
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内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Kingston KHX3600C18D4/32GX 32GB
内存RAM