Samsung M4 70T2953EZ3-CE6 1GB vs Avant Technology J642GU42J5213N4 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Avant Technology J642GU42J5213N4 16GB

Avant Technology J642GU42J5213N4 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值

Avant Technology J642GU42J5213N4 16GB

需要考虑的原因
Avant Technology J642GU42J5213N4 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 73

左右 -97% 更低的延时
更快的写入速度，GB/s

11.3 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Avant Technology J642GU42J5213N4 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 37
读取速度，GB/s

3,510.5 13.6
写入速度，GB/s

1,423.3 11.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 2656

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB