Samsung M4 70T2953EZ3-CE6 1GB vs Corsair CM4B8G4J2400A16K2-ON 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Corsair CM4B8G4J2400A16K2-ON 8GB

Corsair CM4B8G4J2400A16K2-ON 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 18.3

测试中的平均数值

Corsair CM4B8G4J2400A16K2-ON 8GB

需要考虑的原因
Corsair CM4B8G4J2400A16K2-ON 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 -181% 更低的延时
更快的写入速度，GB/s

13.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CM4B8G4J2400A16K2-ON 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 26
读取速度，GB/s

3,510.5 18.3
写入速度，GB/s

1,423.3 13.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 3303

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Kingston KHX3200C18D4/8G 8GB

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Avant Technology W641GU42J5213NC 8GB

Avant Technology W641GU42J5213NC 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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Corsair CM4X8GF2666Z16K4 8GB

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Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-4133C19-8GTZRF 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N