Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-3200C16-8GTRS 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

G Skill Intl F4-3200C16-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 73

左右 -143% 更低的延时
更快的写入速度，GB/s

14.5 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3200C16-8GTRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 30
读取速度，GB/s

3,510.5 18.2
写入速度，GB/s

1,423.3 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 3496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-8GTRS 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB

AMD R5S38G1601U2S 8GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB

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G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB