Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-3600C16-16GVKC 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

G Skill Intl F4-3600C16-16GVKC 16GB

G Skill Intl F4-3600C16-16GVKC 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 19.2

测试中的平均数值

G Skill Intl F4-3600C16-16GVKC 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GVKC 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的写入速度，GB/s

16.0 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3600C16-16GVKC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

3,510.5 19.2
写入速度，GB/s

1,423.3 16.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 3800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905711-035.A00G 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BLS8G4D240FSE.16FBD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

SK Hynix HMA82GU6CJR8N-XN 16GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB