Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 8ATF1G64AZ-2G3A141 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Kingston 8ATF1G64AZ-2G3A141 8GB

需要考虑的原因
Kingston 8ATF1G64AZ-2G3A141 8GB

报告一个错误

低于PassMark测试中的延时，ns

66 73

左右 -11% 更低的延时
更快的写入速度，GB/s

8.1 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 8ATF1G64AZ-2G3A141 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 66
读取速度，GB/s

3,510.5 15.9
写入速度，GB/s

1,423.3 8.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 1953

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Kingston 8ATF1G64AZ-2G3A141 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMK16GX4M2D3600C18 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5702-020.A00G 8GB

Kingston 99U5702-020.A00G 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Kingston 9905700-047.A00G 16GB

Kingston 9905700-047.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB