Samsung M4 70T2953EZ3-CE6 1GB vs SK Hynix HMA851S6AFR6N-UH 4GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

SK Hynix HMA851S6AFR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851S6AFR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 73

左右 -92% 更低的延时
更快的写入速度，GB/s

9.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

SK Hynix HMA851S6AFR6N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 38
读取速度，GB/s

3,510.5 13.8
写入速度，GB/s

1,423.3 9.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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PNY Electronics PNY 2GB

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Crucial Technology BLS8G4D240FSC.16FBD2 8GB

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

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Kingston 9905403-134.A00LF 2GB

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Samsung M378A1K43CB2-CTD 8GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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Kingston 9965516-112.A00LF 16GB

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G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB