Samsung M4 70T2953EZ3-CE6 1GB vs Transcend Information JM2400HSB-8G 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值

Transcend Information JM2400HSB-8G 8GB

需要考虑的原因
Transcend Information JM2400HSB-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 73

左右 -170% 更低的延时
更快的写入速度，GB/s

8.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Transcend Information JM2400HSB-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 27
读取速度，GB/s

3,510.5 13.9
写入速度，GB/s

1,423.3 8.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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Corsair CMR64GX4M4C3000C15 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

Kingston KTC1G-UDIMM 1GB

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Corsair CMW32GX4M4C3200C14 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-3000C16-8GTZR 8GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB