RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
比较
Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLE8G4D30AEEA.K16FD 8GB
总分
Samsung M4 70T5663CZ3-CE6 2GB
总分
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
18
测试中的平均数值
需要考虑的原因
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
报告一个错误
低于PassMark测试中的延时,ns
62
69
左右 -11% 更低的延时
更快的写入速度,GB/s
9.5
1,441.2
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
62
读取速度,GB/s
3,325.1
18.0
写入速度,GB/s
1,441.2
9.5
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
525
2018
Samsung M4 70T5663CZ3-CE6 2GB RAM的比较
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMT32GX4M2K4000C19 16GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
Kingston 99U5584-004.A00LF 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Corsair CMV16GX4M1L2400C16 16GB
Kingston 99U5474-010.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Kingston 9905471-071.A00LF 8GB
Kingston 9905701-010.A00G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Jinyu CL16-16-16 D4-2400 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G32C16U4W.8FE 8GB
报告一个错误
×
Bug description
Source link