Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLS4G4D240FSB.M8FADG 4GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.M8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 69

左右 -138% 更低的延时
更快的写入速度，GB/s

12.8 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 29
读取速度，GB/s

3,325.1 16.9
写入速度，GB/s

1,441.2 12.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2725

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

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Kingston 9905403-198.A00LF 4GB

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Kingston KHX1600C9D3/4G 4GB

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