Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-2133C15-8GVK 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.6

测试中的平均数值

G Skill Intl F4-2133C15-8GVK 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 69

左右 -130% 更低的延时
更快的写入速度，GB/s

10.1 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-2133C15-8GVK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 30
读取速度，GB/s

3,325.1 11.6
写入速度，GB/s

1,441.2 10.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX1600C9D3/2GX 2GB

Kingston KHX1600C9D3/2GX 2GB

Corsair CMW32GX4M2A2666C16 16GB

Corsair CMW32GX4M2A2666C16 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Avant Technology J644GU44J2320NQ 32GB

Avant Technology J644GU44J2320NQ 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB