Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-4400C17-16GTZR 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.2

测试中的平均数值

G Skill Intl F4-4400C17-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的写入速度，GB/s

17.5 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-4400C17-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

3,325.1 20.2
写入速度，GB/s

1,441.2 17.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 4014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

A-DATA Technology DDR3 1333+ 2GB

A-DATA Technology DDR3 1333+ 2GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology AD63I1C1624EV 4GB

A-DATA Technology AD63I1C1624EV 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston 9905625-062.A00G 8GB

Kingston 9905625-062.A00G 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB