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Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905663-008.A00G 16GB

Samsung M4 70T5663CZ3-CE6 2GB vs Kingston 9905663-008.A00G 16GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Kingston 9905663-008.A00G 16GB

Kingston 9905663-008.A00G 16GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.7
    测试中的平均数值
Kingston 9905663-008.A00G 16GB 需要考虑的原因
Kingston 9905663-008.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 69
    左右 -97% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905663-008.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 35
  • 读取速度，GB/s
    3,325.1 left arrow 14.7
  • 写入速度，GB/s
    1,441.2 left arrow 11.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2815

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Kingston 9905663-008.A00G 16GB RAM的比较

PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Asgard VMA42UG-MEC1U2AW1 8GB
Asgard VMA42UG-MEC1U2AW1 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
内存RAM
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston ACR512X64D3U16C11G 4GB
Kingston ACR512X64D3U16C11G 4GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM