Samsung M4 70T5663CZ3-CE6 2GB vs MemxPro Inc. D4S8GHIOFFC 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值

MemxPro Inc. D4S8GHIOFFC 8GB

需要考虑的原因
MemxPro Inc. D4S8GHIOFFC 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 69

左右 -165% 更低的延时
更快的写入速度，GB/s

7.3 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

MemxPro Inc. D4S8GHIOFFC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 26
读取速度，GB/s

3,325.1 14.2
写入速度，GB/s

1,441.2 7.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Avant Technology J641GU42J7240ND 8GB

Avant Technology J641GU42J7240ND 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905678-041.A00G 4GB

Kingston 9905678-041.A00G 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston K821PJ-MIH 16GB

Kingston K821PJ-MIH 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB