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Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-4000C19-16GTZKK 16GB

Samsung M4 70T5663QZ3-CE6 2GB vs G Skill Intl F4-4000C19-16GTZKK 16GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.8
    测试中的平均数值
G Skill Intl F4-4000C19-16GTZKK 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZKK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 68
    左右 -196% 更低的延时
  • 更快的写入速度，GB/s
    18.2 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-4000C19-16GTZKK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 23
  • 读取速度，GB/s
    3,886.6 left arrow 19.8
  • 写入速度，GB/s
    1,702.6 left arrow 18.2
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    654 left arrow 4128

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-4000C19-16GTZKK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.CAGNT.4050B 8GB
Apacer Technology 78.CAGNT.4050B 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905734-018.A00G 16GB
Kingston 9905734-018.A00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-2400C15-4GRB 4GB
G Skill Intl F4-2400C15-4GRB 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Apacer Technology GD2.2229BH.001 16GB
Apacer Technology GD2.2229BH.001 16GB
内存RAM