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Samsung M4 70T5663QZ3-CE6 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M4 70T5663QZ3-CE6 2GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10
    测试中的平均数值
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB 需要考虑的原因
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 68
    左右 -31% 更低的延时
  • 更快的写入速度，GB/s
    7.6 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 52
  • 读取速度，GB/s
    3,886.6 left arrow 10.0
  • 写入速度，GB/s
    1,702.6 left arrow 7.6
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    654 left arrow 2169

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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