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Samsung M4 70T5663QZ3-CE6 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB

Samsung M4 70T5663QZ3-CE6 2GB vs Team Group Inc. TEAMGROUP-D4-3600 4GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 21.7
    测试中的平均数值
Team Group Inc. TEAMGROUP-D4-3600 4GB 需要考虑的原因
Team Group Inc. TEAMGROUP-D4-3600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 68
    左右 -300% 更低的延时
  • 更快的写入速度，GB/s
    16.6 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 17
  • 读取速度，GB/s
    3,886.6 left arrow 21.7
  • 写入速度，GB/s
    1,702.6 left arrow 16.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    654 left arrow 3320

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Team Group Inc. TEAMGROUP-D4-3600 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905678-173.A00G 8GB
Kingston 9905678-173.A00G 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905624-023.A00G 8GB
Kingston 9905624-023.A00G 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston HP26D4U9S1ME-4 4GB
Kingston HP26D4U9S1ME-4 4GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMR32GX4M4C3466C16 8GB
Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F4-3200C16-32GTZN 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM