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Samsung M4 70T5663QZ3-CF7 2GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Samsung M4 70T5663QZ3-CF7 2GB vs Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

总分
star star star star star
Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分
star star star star star
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.2
    测试中的平均数值
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 64
    左右 -237% 更低的延时
  • 更快的写入速度，GB/s
    15.5 left arrow 1,869.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CF7 2GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 19
  • 读取速度，GB/s
    4,477.7 left arrow 19.2
  • 写入速度，GB/s
    1,869.1 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    697 left arrow 3336

Samsung M4 70T5663QZ3-CF7 2GB RAM的比较

Samsung M4 70T5663RZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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