Samsung M4 70T5663QZ3-CF7 2GB vs SK Hynix HYMP125S64CP8-S6 2GB

总分

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

64 68

左右 6% 更低的延时
更快的读取速度，GB/s

4 4

测试中的平均数值

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的写入速度，GB/s

2,013.5 1,869.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CF7 2GB

SK Hynix HYMP125S64CP8-S6 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

64 68
读取速度，GB/s

4,477.7 4,402.8
写入速度，GB/s

1,869.1 2,013.5
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

697 701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

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Samsung M4 70T5663QZ3-CF7 2GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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PNY Electronics PNY 2GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 99U5704-001.A00G 4GB

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G Skill Intl F4-2933C16-16GFX 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2400C15-4GIS 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMW32GX4M4C3000C15 8GB

Corsair CMW32GX4M4C3000C15 8GB