Samsung M471B5273CH0-CH9 4GB vs Heoriady M378A1K43BB2-CTD 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 64

左右 25% 更低的延时

Heoriady M378A1K43BB2-CTD 8GB

需要考虑的原因
Heoriady M378A1K43BB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

17.3 8.9

测试中的平均数值
更快的写入速度，GB/s

8.2 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Heoriady M378A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 64
读取速度，GB/s

8.9 17.3
写入速度，GB/s

5.9 8.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 2067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2666C16/16G 16GB

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Kingston 9905471-006.A00LF 4GB

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Corsair CMT32GX4M2C3200C16 16GB

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Kingston KF552C40-16 16GB

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AMD R5S38G1601U2S 8GB

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Kingston 9905678-006.A00G 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-2800C15-16GVR 16GB

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Corsair CM4B8G1J2400A16K2-ON 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB