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Samsung M4 70T5663QZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Samsung M4 70T5663QZ3-CF7 2GB vs SK Hynix HYMP125S64CP8-S6 2GB

Punteggio complessivo
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Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Punteggio complessivo
star star star star star
SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M4 70T5663QZ3-CF7 2GB Motivi da considerare
Samsung M4 70T5663QZ3-CF7 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    64 left arrow 68
    Intorno 6% latenza inferiore
  • Velocità di lettura più elevata, GB/s
    4 left arrow 4
    Valore medio nei test
SK Hynix HYMP125S64CP8-S6 2GB Motivi da considerare
SK Hynix HYMP125S64CP8-S6 2GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    2,013.5 left arrow 1,869.1
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M4 70T5663QZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR2
  • Latenza in PassMark, ns
    64 left arrow 68
  • Velocità di lettura, GB/s
    4,477.7 left arrow 4,402.8
  • Velocità di scrittura, GB/s
    1,869.1 left arrow 2,013.5
  • Larghezza di banda della memoria, mbps
    6400 left arrow 6400
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Classifica PassMark (più sono, meglio è)
    697 left arrow 701

Samsung M4 70T5663QZ3-CF7 2GB Confronto tra le RAM

Samsung M4 70T5663RZ3-CF7 2GB

SK Hynix HYMP125S64CP8-S6 2GB Confronto tra le RAM

Kingston DDR2 PC800MHz 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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