Samsung M4 70T5663RZ3-CF7 2GB vs Apacer Technology 78.DAGNN.4030B 16GB

总分

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

总分

Apacer Technology 78.DAGNN.4030B 16GB

Apacer Technology 78.DAGNN.4030B 16GB

差异规格评论

差异

Samsung M4 70T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663RZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

61 64

左右 5% 更低的延时
更快的读取速度，GB/s

4 17.9

测试中的平均数值

Apacer Technology 78.DAGNN.4030B 16GB

需要考虑的原因
Apacer Technology 78.DAGNN.4030B 16GB

报告一个错误

更快的写入速度，GB/s

10.2 1,903.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663RZ3-CF7 2GB

Apacer Technology 78.DAGNN.4030B 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 64
读取速度，GB/s

4,668.9 17.9
写入速度，GB/s

1,903.1 10.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

735 2194

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HYMP125S64CP8-S6 2GB

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A-DATA Technology AE4S240038G17-BHYA 8GB

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Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

PUSKILL DDR3 1600 8G 8GB

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