Samsung M4 70T5663RZ3-CF7 2GB vs G Skill Intl F4-3466C16-4GVK 4GB

总分

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

总分

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

差异规格评论

差异

Samsung M4 70T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.6

测试中的平均数值

G Skill Intl F4-3466C16-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3466C16-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 61

左右 -205% 更低的延时
更快的写入速度，GB/s

15.5 1,903.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663RZ3-CF7 2GB

G Skill Intl F4-3466C16-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 20
读取速度，GB/s

4,668.9 19.6
写入速度，GB/s

1,903.1 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

735 3234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Samsung M4 70T5663RZ3-CF7 2GB

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G Skill Intl F4-3466C16-4GVK 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Smart Modular SF464128CKHI6DFSEG 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

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Gloway International Co. Ltd. TYA4U3000E16081C 8GB

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Kingston 16JTF51264AZ-1G6M1 4GB

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Kingston KVR800D2S6/4G 4GB

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Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB