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Samsung M471A1G43EB1-CRC 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Samsung M471A1G43EB1-CRC 8GB vs Crucial Technology CT8G4SFS824A.M8FJ 8GB

总分
star star star star star
Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

总分
star star star star star
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

差异 规格 评论

差异

Samsung M471A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M471A1G43EB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
Crucial Technology CT8G4SFS824A.M8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FJ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 9.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G43EB1-CRC 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    14.8 left arrow 15.0
  • 写入速度，GB/s
    9.3 left arrow 10.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2340 left arrow 2516

Samsung M471A1G43EB1-CRC 8GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Samsung M471A1G43EB1-CRC 8GB
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内存RAM
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内存RAM
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