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Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Samsung M471A1G44AB0-CWE 8GB vs Crucial Technology BLE8G4D26AFEA.16FAD 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Crucial Technology BLE8G4D26AFEA.16FAD 8GB 需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 50
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 33
  • 读取速度，GB/s
    15.3 left arrow 16.4
  • 写入速度，GB/s
    10.9 left arrow 12.1
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 2988

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
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Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
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Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Kingston HP32D4U2S8MR-8 8GB
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Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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Corsair CMK64GX4M2A2666C16 32GB
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Kingston 99U5474-010.A00LF 2GB
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Samsung M393A2G40DB1-CRC 16GB
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Kingston 9905471-002.A00LF 2GB
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Heoriady M471A1K43CB1-CTD 8GB
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology CT8G4SFS8213.C8FDR1 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMU32GX4M4C3000C16 8GB
Corsair CMU32GX4M4C3000C16 8GB
内存RAM
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Crucial Technology CT51264BA1339.D16F 4GB
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Corsair CM4X16GE2666C18S2 16GB
内存RAM
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Samsung M391A2K43BB1-CTD 16GB
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Samsung M4 70T2864QZ3-CF7 1GB
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Kingston KCDT82-MIE 4GB
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