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Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB

Samsung M471A1G44AB0-CWE 8GB vs Crucial Technology CT8G4SFRA32A.C16FG 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 58
    左右 14% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 9.9
    测试中的平均数值
Crucial Technology CT8G4SFRA32A.C16FG 8GB 需要考虑的原因
Crucial Technology CT8G4SFRA32A.C16FG 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 15.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 58
  • 读取速度，GB/s
    15.3 left arrow 15.7
  • 写入速度，GB/s
    10.9 left arrow 9.9
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 2096

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905624-025.A00G 8GB
Kingston 9905624-025.A00G 8GB
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Samsung M3 78T3354BZ0-CCC 256MB
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V-GEN D4H4GL26A8TS5 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
A-DATA Technology DDR4 2800 8GB
A-DATA Technology DDR4 2800 8GB
内存RAM
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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Crucial Technology CT8G4DFD8213.C16FADP 8GB
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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C14-16GTZKY 16GB
G Skill Intl F4-3200C14-16GTZKY 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM