Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4DFD824A.M16FB 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Crucial Technology CT16G4DFD824A.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FB 16GB

报告一个错误

更快的读取速度，GB/s

15.7 12.8

测试中的平均数值
更快的写入速度，GB/s

10.4 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

12.8 15.7
写入速度，GB/s

9.0 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

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Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Samsung F6451U64F9333G 4GB

Samsung F6451U64F9333G 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Apacer Technology 78.BAGP4.AR50C 4GB

Apacer Technology 78.BAGP4.AR50C 4GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

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G Skill Intl F4-3200C16-16GTRS 16GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB