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Samsung M471A1G44AB0-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB

Samsung M471A1G44AB0-CWE 8GB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
Micron Technology 16ATF2G64HZ-3G2E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 50
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 35
  • 读取速度，GB/s
    15.3 left arrow 16.7
  • 写入速度，GB/s
    10.9 left arrow 15.1
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 3191

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB RAM的比较

PNY Electronics PNY 2GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK32GX4M4A2400C14 8GB
Corsair CMK32GX4M4A2400C14 8GB
内存RAM
Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston MSI24D4S7S8S8-8 8GB
Kingston MSI24D4S7S8S8-8 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited KD48GS88J-26N1900 8GB
Essencore Limited KD48GS88J-26N1900 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3600C16-8GTZN 8GB
G Skill Intl F4-3600C16-8GTZN 8GB
内存RAM