Samsung M471B5273CH0-CH9 4GB vs Micron Technology 18ASF1G72AZ-2G1A1 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Micron Technology 18ASF1G72AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

17.2 8.9

测试中的平均数值
更快的写入速度，GB/s

13.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

8.9 17.2
写入速度，GB/s

5.9 13.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

UMAX Technology 16GB

UMAX Technology 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Corsair CMK16GX4M2K4000C19 8GB

Corsair CMK16GX4M2K4000C19 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Transcend Information JM3200HSE-32G 32GB

Transcend Information JM3200HSE-32G 32GB