RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
Samsung M471A1K43CB1-CTD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Samsung M471A1K43CB1-CTD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
33
左右 -27% 更低的延时
更快的读取速度,GB/s
16.8
15.8
测试中的平均数值
更快的写入速度,GB/s
13.5
11.9
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
26
读取速度,GB/s
15.8
16.8
写入速度,GB/s
11.9
13.5
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2824
2880
Samsung M471A1K43CB1-CTD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX3600C17D4/16GX 16GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
Kingston 99U5474-028.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M378B5673EH1-CF8 2GB
Samsung M378A1G43EB1-CPB 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9965669-032.A00G 16GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMW64GX4M8A2666C16 8GB
Kingston 9965525-010.A00LF 4GB
G Skill Intl F4-3600C19-16GSXK 16GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Kingston KVR24N17S8/4 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M393A5143DB0-CPB 4GB
报告一个错误
×
Bug description
Source link