Samsung M471A1K43DB1-CTD 8GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

差异规格评论

差异

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的写入速度，GB/s

11.8 10.8

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 -52% 更低的延时
更快的读取速度，GB/s

16.3 15.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43DB1-CTD 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 23
读取速度，GB/s

15.7 16.3
写入速度，GB/s

11.8 10.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2767 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMSX64GX4M2A2933C19 32GB

Corsair CMSX64GX4M2A2933C19 32GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB