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Samsung M471A1K43DB1-CTD 8GB
Kingston HP26D4S9S8ME-8 8GB

Samsung M471A1K43DB1-CTD 8GB vs Kingston HP26D4S9S8ME-8 8GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
Kingston HP26D4S9S8ME-8 8GB

Kingston HP26D4S9S8ME-8 8GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 11.3
    测试中的平均数值
Kingston HP26D4S9S8ME-8 8GB 需要考虑的原因
Kingston HP26D4S9S8ME-8 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A1K43DB1-CTD 8GB
Kingston HP26D4S9S8ME-8 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 36
  • 读取速度，GB/s
    15.7 left arrow 14.7
  • 写入速度，GB/s
    11.8 left arrow 11.3
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2767 left arrow 2554

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HP26D4S9S8ME-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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