Samsung M471A1K43DB1-CWE 8GB vs Heoriady M471A1K43BB1-CRC 16GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

总分

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

差异规格评论

差异

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 11% 更低的延时
更快的读取速度，GB/s

16.1 15.1

测试中的平均数值
更快的写入速度，GB/s

13.0 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Heoriady M471A1K43BB1-CRC 16GB

需要考虑的原因
Heoriady M471A1K43BB1-CRC 16GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A1K43DB1-CWE 8GB

Heoriady M471A1K43BB1-CRC 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 37
读取速度，GB/s

16.1 15.1
写入速度，GB/s

13.0 9.6
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2987 2758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston KHX3600C17D4/16GX 16GB

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Kingston 99U5474-023.A00LF 4GB

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Kingston HP24D4S7S8MBP-8 8GB

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Samsung M378B5673FH0-CH9 2GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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G Skill Intl F4-4000C17-8GTZR 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA851S6CJR6N-XN 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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A-DATA Technology AO2P26KC8T1-BC1S 8GB

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Kingston KVR800D2N6/2G 2GB

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V-GEN D4M8GL26A8TS6 8GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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