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Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BLS4G4D240FSB.8FBD2 4GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
16.5
测试中的平均数值
更快的写入速度,GB/s
12.5
12.2
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
33
左右 -6% 更低的延时
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
31
读取速度,GB/s
17.8
16.5
写入速度,GB/s
12.5
12.2
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3285
2774
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-011.A03LF 2GB
Corsair CMT64GX4M2C3600C18 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
SK Hynix HMA42GR7MFR4N-TF 16GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Kingston ACR16D3LS1KNG/8G 8GB
SK Hynix HMA851U6DJR6N-WM 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KF3000C16D4/32GX 32GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
AMD R5S38G1601U2S 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMU64GX4M4C3200C16 16GB
PUSKILL DDR3 1600 8G 8GB
AMD R9S48G3206U2S 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905630-052.A00G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
报告一个错误
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Bug description
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